размеры 9.65 x 10.67 x 4.83mm
Diode Type Silicon Junction
высота 9.65mm
длина 10.67mm
Maximum Continuous Forward Current 30A
максимальная рабочая температура +175 °C
Minimum Operating Temperature -65 °C
тип монтажа Through Hole
Number of Elements per Chip 1
Корпус TO-220AC
Peak Forward Voltage 3.2V
Peak Non-Repetitive Forward Surge Current 0.3kA
Peak Reverse Current 1mA
Peak Reverse Recovery Time 85ns
Peak Reverse Repetitive Voltage 1200V
Pin Count 2
ширина 4.83mm
Rectifier Type Switching
Diode Configuration одиночный
Описание ( смотреть )